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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.236
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RFQ
Infineon Technologies MOSFET P-CH 100V 23A TO-220AB TO-220-3 Automotive, AEC-Q101 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Not For New Designs TO-220 0 1000 P-Channel - -100V 23A (Tc) 117 mOhm @ 11A, 10V 4V @ 250µA 97nC @ 10V 1300pF @ 25V 10V ±20V 140W (Tc)
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Per Unit
$0.780
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RFQ
Infineon Technologies MOSFET N-CH 40V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs D-PAK 0 3000 N-Channel - 40V 42A (Tc) 5.5 mOhm @ 42A, 10V 4V @ 250µA 89nC @ 10V 2950pF @ 25V 10V ±20V 140W (Tc)
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