- Package / Case :
- Series :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | N-Channel | - | 40V | 42A (Tc) | 5.5 mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | 10V | ±20V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 150V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | P-Channel | - | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | N-Channel | - | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | 43W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 600V 9A 4VSON | 4-PowerTSFN | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | PG-VSON-4 | 0 | 3000 | N-Channel | - | 600V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 17nC @ 10V | 790pF @ 100V | 10V | ±20V | 83W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 16.4A 4VSON | 4-PowerTSFN | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | PG-VSON-4 | 0 | 3000 | N-Channel | - | 650V | 16.4A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 32nC @ 10V | 1520pF @ 100V | 10V | ±20V | 139W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 11.1A 4VSON | 4-PowerTSFN | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | PG-VSON-4 | 0 | 3000 | N-Channel | - | 650V | 11.1A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 22nC @ 10V | 1100pF @ 100V | 10V | ±20V | 96W (Tc) |
