- Manufacture :
- Series :
- Packaging :
- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO263-7 | 0 | 1000 | N-Channel | - | 100V | 180A | 2.5 mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | 14800pF @ 50V | 6V, 10V | ±20V | 300W (Tc) | |||
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20
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Infineon Technologies | MOSFET N-CH 75V 120A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1 | N-Channel | - | 75V | 120A (Tc) | 4.1 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6920pF @ 50V | 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 100A TO-220 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO-220-3 | 0 | 500 | N-Channel | - | 100V | 100A (Tc) | 5.4 mOhm @ 100A, 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 100V | 100A (Tc) | 4.8 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 75A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 800 | N-Channel | - | 40V | 75A (Tc) | 2 mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | 6450pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO263-7-3 | 0 | 1000 | N-Channel | - | 40V | 180A (Tc) | 1.5 mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 75V 80A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 75V | 80A (Tc) | 7.4 mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | 4700pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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GET PRICE |
46,250
In-stock
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STMicroelectronics | MOSFET N-CH 60V 80A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1000 | N-Channel | - | 60V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4V @ 250µA | 150nC @ 10V | 3850pF @ 25V | 10V | ±20V | 300W (Tc) | ||
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457
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO220-3-1 | 0 | 1 | N-Channel | - | 40V | 120A (Tc) | 2.3 mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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665
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO220-3-1 | 0 | 1 | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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1,065
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1 | N-Channel | - | 60V | 120A (Tc) | 3 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6540pF @ 50V | 10V | ±20V | 300W (Tc) |
