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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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$0.835
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Infineon Technologies MOSFET N-CH 55V 29A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Not For New Designs TO-220AB 0 1000 N-Channel - 55V 29A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V 68W (Tc)
IPD50N04S308ATMA1
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26,000
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Infineon Technologies MOSFET N-CH 40V 50A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs PG-TO252-3 0 2500 N-Channel - 40V 50A (Tc) 7.5 mOhm @ 50A, 10V 4V @ 40µA 35nC @ 10V 2350pF @ 25V 10V ±20V 68W (Tc)
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$0.335
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Infineon Technologies MOSFET N-CH 60V 27A TO-252 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs PG-TO252-3 0 2500 N-Channel - 60V 27A (Tc) 40 mOhm @ 27A, 10V 4V @ 28µA 17nC @ 10V 650pF @ 30V 10V ±20V 68W (Tc)
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