- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 195A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 2.5 mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 79A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1000 | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | - | - | 110W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 80A TO220-3 | TO-220-3 | Automotive, AEC-Q101, OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 60V | 80A (Tc) | 6.7 mOhm @ 80A, 10V | 2.2V @ 40µA | 75nC @ 10V | 5680pF @ 25V | 4.5V, 10V | ±16V | 79W (Tc) | ||||
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GET PRICE |
46,250
In-stock
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STMicroelectronics | MOSFET N-CH 60V 80A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1000 | N-Channel | - | 60V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4V @ 250µA | 150nC @ 10V | 3850pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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25,000
In-stock
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onsemi | MOSFET N-CH 60V 50A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220-3 | 0 | 1 | N-Channel | - | 60V | 50A (Tc) | 22 mOhm @ 25A, 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | 10V | ±25V | 120W (Tc) | ||||
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1,065
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1 | N-Channel | - | 60V | 120A (Tc) | 3 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6540pF @ 50V | 10V | ±20V | 300W (Tc) |