- Manufacture :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 70A TO220-3 | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 100V | 70A (Tc) | 16 mOhm @ 50A, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | 4.5V, 10V | ±20V | 250W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 80A TO220-3 | TO-220-3 | Automotive, AEC-Q101, OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 60V | 80A (Tc) | 6.7 mOhm @ 80A, 10V | 2.2V @ 40µA | 75nC @ 10V | 5680pF @ 25V | 4.5V, 10V | ±16V | 79W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 30V 40A TO-220 | TO-220-3 | STripFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 4000 | N-Channel | - | 30V | 40A (Tc) | 22 mOhm @ 20A, 10V | 2.5V @ 250µA | 15nC @ 4.5V | 770pF @ 25V | 4.5V, 10V | ±16V | 70W (Tc) |
