- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 20A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 750 | N-Channel | - | 30V | 20A (Tc) | 45 mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | 450pF @ 25V | 4.5V, 10V | ±16V | 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 20A DPAK | TO-252-4, DPak (3 Leads + Tab) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | I-PAK (LF701) | 0 | 750 | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) |
