- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
31 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,228
In-stock
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Fairchild Semiconductor | MOSFET -33.5A,-100V, P-ch | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 33.5 A | 60 mOhms | Enhancement | QFET | ||||||
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2,874
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 160 mOhms | - 4 V | 48 nC | Enhancement | SIPMOS | ||||
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2,406
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | SIPMOS | ||||
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2,470
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 160 mOhms | - 4 V | 48 nC | Enhancement | |||||
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2,258
In-stock
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IR / Infineon | MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | - 4 V | 38.7 nC | ||||||
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1,158
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 13.2 A | 125 mOhms | Enhancement | QFET | ||||||
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800
In-stock
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Fairchild Semiconductor | MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 22 A | 125 mOhms | Enhancement | QFET | ||||||
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793
In-stock
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Vishay Semiconductors | MOSFET -100V -30A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 38 A | 0.033 Ohms | - 2.5 V | 144 nC | Enhancement | TrenchFET | ||||
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3,372
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 4.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4.2 A | 850 mOhms | Enhancement | SIPMOS | ||||||
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1,248
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | |||||
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4,039
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -4A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4 A | 644 mOhms | - 4 V | 12 nC | Enhancement | SIPMOS | ||||
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708
In-stock
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Siliconix / Vishay | MOSFET P-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 0.033 Ohms | - 2.5 V | 134 nC | Enhancement | TrenchFET | ||||
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800
In-stock
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Siliconix / Vishay | MOSFET P Ch -100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 93 A | 0.0155 Ohms | - 2.5 V | 350 nC | Enhancement | |||||
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1,171
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 8 A | 530 mOhms | Enhancement | QFET | ||||||
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701
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 11.5 A | 290 mOhms | Enhancement | QFET | ||||||
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386
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 8 A | 530 mOhms | Enhancement | |||||||
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1,043
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 16.5 A | 190 mOhms | Enhancement | QFET | ||||||
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798
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 22 A | 125 mOhms | Enhancement | |||||||
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35,730
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 33.5 A | 60 mOhms | Enhancement | |||||||
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1,159
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | 38.7 nC | Enhancement | ||||||
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405
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | - 4 V | 180 nC | Enhancement | |||||
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899
In-stock
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Infineon Technologies | MOSFET PLANAR_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.8 A | 480 mOhms | 18 nC | Enhancement | ||||||
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536
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 200 mOhms | 47 nC | Enhancement | SIPMOS | |||||
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280
In-stock
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Siliconix / Vishay | MOSFET P Ch -100Vds 20Vgs | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 120 A | 0.0081 Ohms | - 2.5 V | 190 nC | Enhancement | |||||
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809
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | - 4 V | 64.7 nC | Enhancement | |||||
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461
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 240 mOhms | 37 nC | Enhancement | SIPMOS | |||||
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998
In-stock
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IR / Infineon | MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | - 4 V | 58 nC | Enhancement | |||||
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117
In-stock
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STMicroelectronics | MOSFET P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power ... | +/- 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 10 A | 180 mOhms | 2 V | 16.5 nC | Enhancement | ||||||
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1,500
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | Enhancement | ||||||
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GET PRICE |
5,000
In-stock
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Siliconix / Vishay | MOSFET -100V Vds TrenchFET -/+20V Vgs TO-220AB | 20 V | Through Hole | TO-220AB | - 55 C | + 175 C | Tube | 1 Channel | P-Channel | - 100 V | - 120 A | 11.4 mOhms | - 2.5 V | 125 nC |