- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,462
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 28 A | 65 mOhms | 42 nC | Enhancement | ||||||
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4,413
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 42 nC | Enhancement | |||||
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2,331
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -45A TO220-3 OptiMOS-P2 | + 5 V, - 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 45 A | 9 mOhms | - 1.5 V | 42 nC | Enhancement | OptiMOS | ||||
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2,965
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -28A 65mOhm 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | 42 nC | Enhancement | ||||||
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229,100
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -31A 60mOhm 42nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | - 4 V | 42 nC | ||||||
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1,282
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 60mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | Enhancement | ||||||
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1,513
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH 60mOhm HEXFET -31A ID | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | Enhancement | ||||||
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3,400
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -55V -28A 65mOhm 42nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 42 nC | ||||||
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VIEW | Infineon Technologies | MOSFET P-Ch -30V -45A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 45 A | 10.8 mOhms | 42 nC | OptiMOS |