- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.005 Ohms (1)
- 120 mOhms (1)
- 130 mOhms (1)
- 150 mOhms (1)
- 156 mOhms (1)
- 160 mOhms (1)
- 170 mOhms (2)
- 175 mOhms (2)
- 18 mOhms (1)
- 180 mOhms (1)
- 190 mOhms (1)
- 2.9 mOhms (2)
- 200 mOhms (3)
- 21 mOhms (2)
- 230 mOhms (2)
- 240 mOhms (1)
- 26 mOhms (2)
- 290 mOhms (1)
- 3.7 mOhms (2)
- 410 mOhms (1)
- 480 mOhms (1)
- 50 mOhms (1)
- 530 mOhms (1)
- 6.9 mOhms (1)
- 60 mOhms (1)
- 70 mOhms (1)
- 9 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
36 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
43,400
In-stock
|
onsemi | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 70 mOhms | Enhancement | QFET | ||||
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4,043
In-stock
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Fairchild Semiconductor | MOSFET P-Ch LL FET Enhancement Mode | 8 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 24 A | 50 mOhms | Enhancement | ||||||
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5,092
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | OptiMOS | |||
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3,657
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 47 A | 26 mOhms | Enhancement | QFET | |||||
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2,458
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 150mOhms 21nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 27 A | 150 mOhms | 21 nC | Enhancement | |||||
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1,439
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | |||
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23,550
In-stock
|
STMicroelectronics | MOSFET P-Ch 55 Volt 80 Amp | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 80 A | 18 mOhms | Enhancement | ||||||
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3,400
In-stock
|
IR / Infineon | MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC | 20 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 14 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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6,610
In-stock
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IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | ||||||
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2,691
In-stock
|
STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
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2,331
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -45A TO220-3 OptiMOS-P2 | + 5 V, - 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 45 A | 9 mOhms | - 1.5 V | 42 nC | Enhancement | OptiMOS | |||
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2,258
In-stock
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IR / Infineon | MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | - 4 V | 38.7 nC | |||||
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229,100
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -31A 60mOhm 42nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | - 4 V | 42 nC | |||||
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717
In-stock
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Fairchild Semiconductor | MOSFET -60V -30A P-Channel | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 26 mOhms | Enhancement | ||||||
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846
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | ||||
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1,171
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 8 A | 530 mOhms | Enhancement | QFET | |||||
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854
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 11.4 A | 175 mOhms | Enhancement | QFET | |||||
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1,333
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 6.7 A | 410 mOhms | Enhancement | QFET | |||||
|
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5,000
In-stock
|
onsemi | MOSFET -60V -12A P-Channel | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 156 mOhms | Enhancement | ||||||
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701
In-stock
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 11.5 A | 290 mOhms | Enhancement | QFET | |||||
|
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5,500
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 12 A | 175 mOhms | - 4 V | 12.7 nC | |||||
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GET PRICE |
15,240
In-stock
|
onsemi | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 17 A | 120 mOhms | Enhancement | QFET | ||||
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1,043
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 16.5 A | 190 mOhms | Enhancement | QFET | |||||
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451
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -120A TO220-3 OptiMOS-P2 | +/- 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.9 mOhms | - 2.2 V | 234 nC | Enhancement | OptiMOS | |||
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899
In-stock
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Infineon Technologies | MOSFET PLANAR_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.8 A | 480 mOhms | 18 nC | Enhancement | |||||
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664
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -18.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 18.7 A | 130 mOhms | - 21 nC | SIPMOS | |||||
|
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8,920
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -8.8A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 8.8 A | 230 mOhms | - 4 V | 15 nC | Enhancement | SIPMOS | |||
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536
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 200 mOhms | 47 nC | Enhancement | SIPMOS | ||||
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627
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | ||||
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590
In-stock
|
STMicroelectronics | MOSFET P-CH 60V 0.13Ohm 10A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 160 mOhms | 2 V to 4 V | 6.4 nC |
