- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
-
- - 1.7 A (1)
- - 10 A (4)
- - 100 A (1)
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- - 15 A (1)
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- - 16 A (2)
- - 17 A (2)
- - 18.5 A (1)
- - 18.6 A (2)
- - 18.7 A (3)
- - 2.3 A (1)
- - 2.6 A (2)
- - 2.8 A (2)
- - 20 A (3)
- - 23.6 A (1)
- - 27 A (3)
- - 27.5 A (1)
- - 3 A (1)
- - 30 A (5)
- - 35 A (1)
- - 36 A (1)
- - 4.6 A (1)
- - 47 A (2)
- - 5.3 A (2)
- - 50 A (2)
- - 52 A (1)
- - 6 A (1)
- - 6.7 A (1)
- - 61 A (1)
- - 8 A (1)
- - 8.6 A (1)
- - 8.8 A (3)
- - 8.83 A (3)
- - 80 A (4)
- - 9.7 A (2)
- Rds On - Drain-Source Resistance :
-
- - 70 mOhms (1)
- 0.0056 Ohms (2)
- 0.0071 Ohms (1)
- 0.0072 Ohms (1)
- 0.013 Ohms (2)
- 0.0135 Ohms (1)
- 0.0155 Ohms (1)
- 0.046 Ohms (1)
- 0.05 Ohms (2)
- 0.067 Ohms (1)
- 0.07 Ohms (1)
- 0.079 Ohms (2)
- 0.13 Ohms (2)
- 0.268 Ohms (1)
- 100 mOhms (2)
- 101 mOhms (2)
- 120 mOhms (2)
- 130 mOhms (4)
- 138 mOhms (1)
- 145 mOhms (1)
- 154 mOhms (1)
- 155 mOhms (3)
- 156 mOhms (1)
- 16 mOhms (1)
- 160 mOhms (1)
- 175 mOhms (2)
- 180 mOhms (2)
- 200 mOhms (2)
- 21 mOhms (6)
- 230 mOhms (5)
- 25 mOhms (1)
- 26 mOhms (3)
- 300 mOhms (1)
- 33 mOhms (1)
- 380 mOhms (1)
- 410 mOhms (1)
- 52 mOhms (2)
- 55 mOhms (1)
- 65 mOhms (1)
- 69 mOhms (2)
- 70 mOhms (2)
- 72 mOhms (2)
- 76 mOhms (1)
- 78 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- - 13 nC (3)
- - 21 nC (1)
- - 28 nC (2)
- 100 nC (1)
- 108 nC (1)
- 12 nC (1)
- 14.3 nC (1)
- 140 nC (1)
- 15 nC (4)
- 150 nC (1)
- 155 nC (1)
- 173 nC (4)
- 200 nC (1)
- 21 nC (2)
- 22 nC (2)
- 25 nC (3)
- 26 nC (1)
- 270 nC (2)
- 3.5 nC (1)
- 30 nC (1)
- 300 nC (1)
- 33 nC (2)
- 33.5 nC (1)
- 38 nC (2)
- 40 nC (2)
- 41 nC (1)
- 48 nC (2)
- 6.4 nC (2)
- 7 nC (2)
- 8.5 nC (1)
- 85 nC (1)
- Tradename :
75 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,408
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 33 mOhms | - 2.6 V | 33.5 nC | Enhancement | ||||
|
|
GET PRICE |
111,683
In-stock
|
Vishay Semiconductors | MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 5.3 A | 0.079 Ohms | - 2.5 V | 22 nC | Enhancement | TrenchFET | ||
|
|
54,053
In-stock
|
Vishay Semiconductors | MOSFET 60V -1.7A 2W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.7 A | 0.268 Ohms | - 2.5 V | 8.5 nC | Enhancement | TrenchFET | |||
|
|
GET PRICE |
6,078
In-stock
|
Vishay Semiconductors | MOSFET 60V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 0.0135 Ohms | - 2.5 V | 150 nC | Enhancement | TrenchFET | ||
|
|
5,382
In-stock
|
Vishay Semiconductors | MOSFET 60 V 120A 375 W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 120 A | 0.0056 Ohms | - 2.5 V | 270 nC | Enhancement | TrenchFET | |||
|
|
18,088
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 15 A | 76 mOhms | Enhancement | PowerTrench | |||||
|
|
GET PRICE |
22,868
In-stock
|
onsemi | MOSFET -60V 2.6A P-Channel | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.6 A | 145 mOhms | Enhancement | |||||
|
|
GET PRICE |
43,400
In-stock
|
onsemi | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 70 mOhms | Enhancement | QFET | ||||
|
|
3,813
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -30A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 69 mOhms | - 4 V | 48 nC | Enhancement | SIPMOS | |||
|
|
9,628
In-stock
|
Vishay Semiconductors | MOSFET 60V 20A 46W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 0.046 Ohms | - 2.5 V | 41 nC | Enhancement | TrenchFET | |||
|
|
4,050
In-stock
|
onsemi | MOSFET Single P-Channel 60V,14A,52mohm | SMD/SMT | WDFN-8 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 14 A | 52 mOhms | |||||||||
|
|
4,700
In-stock
|
onsemi | MOSFET 60V T1 PCH DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 61 A | 16 mOhms | 85 nC | ||||||
|
|
3,657
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 47 A | 26 mOhms | Enhancement | QFET | |||||
|
|
1,860
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 26 mOhms | Enhancement | QFET | |||||
|
|
1,439
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | |||
|
|
1,856
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 80A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | |||
|
|
3,942
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -18.6A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.6 A | 100 mOhms | - 4 V | 33 nC | Enhancement | SIPMOS | |||
|
|
2,691
In-stock
|
STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
|
|
3,938
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 52 A | 0.0155 Ohms | - 2.5 V | 108 nC | Enhancement | ||||
|
|
3,524
In-stock
|
Vishay Semiconductors | MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.6 A | 0.067 Ohms | - 2.5 V | 40 nC | Enhancement | TrenchFET | |||
|
|
9,460
In-stock
|
onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | |||||
|
|
5,067
In-stock
|
onsemi | MOSFET -60V -12A P-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | Enhancement | ||||||
|
|
3,825
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 9.7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.7 A | 200 mOhms | - 2 V | 21 nC | Enhancement | SIPMOS | |||
|
|
GET PRICE |
30,120
In-stock
|
onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | ||||
|
|
2,368
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 8.6 A | 175 mOhms | Enhancement | QFET | |||||
|
|
1,312
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 17 A | 70 mOhms | Enhancement | QFET | |||||
|
|
1,600
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 55 mOhms | Enhancement | ||||||
|
|
3,423
In-stock
|
onsemi | MOSFET PFET DPAK 60V 12A 180MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | 15 nC | |||||||
|
|
2,100
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -8.8A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.83 A | 230 mOhms | - 4 V | - 13 nC | Enhancement | SIPMOS | |||
|
|
717
In-stock
|
Fairchild Semiconductor | MOSFET -60V -30A P-Channel | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 26 mOhms | Enhancement |
