- Mounting Style :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- - 70 mOhms (1)
- 0.0056 Ohms (2)
- 0.0071 Ohms (1)
- 0.0072 Ohms (1)
- 0.013 Ohms (2)
- 0.0135 Ohms (1)
- 0.0155 Ohms (1)
- 0.046 Ohms (1)
- 0.05 Ohms (2)
- 0.067 Ohms (1)
- 0.07 Ohms (1)
- 0.079 Ohms (2)
- 0.13 Ohms (2)
- 0.268 Ohms (1)
- 100 mOhms (2)
- 101 mOhms (2)
- 130 mOhms (2)
- 200 mOhms (2)
- 21 mOhms (5)
- 230 mOhms (5)
- 25 mOhms (1)
- 33 mOhms (1)
- 69 mOhms (2)
- 72 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
43 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,408
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 33 mOhms | - 2.6 V | 33.5 nC | Enhancement | ||||
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GET PRICE |
111,683
In-stock
|
Vishay Semiconductors | MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 5.3 A | 0.079 Ohms | - 2.5 V | 22 nC | Enhancement | TrenchFET | ||
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54,053
In-stock
|
Vishay Semiconductors | MOSFET 60V -1.7A 2W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.7 A | 0.268 Ohms | - 2.5 V | 8.5 nC | Enhancement | TrenchFET | |||
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GET PRICE |
6,078
In-stock
|
Vishay Semiconductors | MOSFET 60V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 0.0135 Ohms | - 2.5 V | 150 nC | Enhancement | TrenchFET | ||
|
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5,382
In-stock
|
Vishay Semiconductors | MOSFET 60 V 120A 375 W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 120 A | 0.0056 Ohms | - 2.5 V | 270 nC | Enhancement | TrenchFET | |||
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3,813
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -30A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 69 mOhms | - 4 V | 48 nC | Enhancement | SIPMOS | |||
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9,628
In-stock
|
Vishay Semiconductors | MOSFET 60V 20A 46W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 0.046 Ohms | - 2.5 V | 41 nC | Enhancement | TrenchFET | |||
|
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1,439
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | |||
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1,856
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 80A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | |||
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3,942
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -18.6A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.6 A | 100 mOhms | - 4 V | 33 nC | Enhancement | SIPMOS | |||
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|
3,938
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 52 A | 0.0155 Ohms | - 2.5 V | 108 nC | Enhancement | ||||
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3,524
In-stock
|
Vishay Semiconductors | MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.6 A | 0.067 Ohms | - 2.5 V | 40 nC | Enhancement | TrenchFET | |||
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9,460
In-stock
|
onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | |||||
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3,825
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 9.7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.7 A | 200 mOhms | - 2 V | 21 nC | Enhancement | SIPMOS | |||
|
|
GET PRICE |
30,120
In-stock
|
onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | ||||
|
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2,100
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -8.8A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.83 A | 230 mOhms | - 4 V | - 13 nC | Enhancement | SIPMOS | |||
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5,905
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 130 mOhms | - 4 V | 6.4 nC | Enhancement | ||||
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652
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 80A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | ||||
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2,219
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -30A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 69 mOhms | - 4 V | 48 nC | Enhancement | ||||
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2,627
In-stock
|
onsemi | MOSFET PFET 60V 15.5A 130R | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 15.5 A | 130 mOhms | - 2 V | 26 nC | Enhancement | ||||
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2,573
In-stock
|
Vishay Semiconductors | MOSFET -60V -8A 45W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8 A | 0.07 Ohms | - 2.5 V | 40 nC | Enhancement | TrenchFET | |||
|
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2,500
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -18.6A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.6 A | 100 mOhms | - 4 V | 33 nC | Enhancement | ||||
|
|
846
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | ||||
|
|
2,765
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 36 A | 21 mOhms | - 2.5 V | 100 nC | Enhancement | ||||
|
|
3,692
In-stock
|
Vishay Semiconductors | MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.8 A | 0.13 Ohms | - 2.5 V | 15 nC | Enhancement | TrenchFET | |||
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|
2,726
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.8 A | 0.13 Ohms | - 2.5 V | 12 nC | Enhancement | ||||
|
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8,920
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -8.8A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 8.8 A | 230 mOhms | - 4 V | 15 nC | Enhancement | SIPMOS | |||
|
|
2,877
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 5.3 A | 0.079 Ohms | - 2.5 V | 22 nC | Enhancement | ||||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 18.6A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.7 A | 101 mOhms | - 4 V | - 28 nC | Enhancement | SIPMOS | |||
|
|
2,083
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 23.6 A | - 70 mOhms | - 3 V | 25 nC | Enhancement |
