- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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27,320
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 65 mOhms | 10 nC | Enhancement | |||||
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908
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 22A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 14.6 mOhms | Enhancement | OptiMOS | |||||
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430
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 22 A | 65 mOhms | 10 nC | Enhancement | |||||
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16
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 22A TO220-3 OptiMOS-T2 | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 22 A | 14.9 mOhms | Enhancement | OptiMOS |