- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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657
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||
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GET PRICE |
897
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 72A 12mOhm 73.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 72 A | 12 mOhms | 4 V | 73.3 nC | |||
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GET PRICE |
200
In-stock
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IR / Infineon | MOSFET MOSFT 200V 76A 23.2mOhm 100nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||
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6,000
In-stock
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Toshiba | MOSFET N-Ch 40V 1570pF 24.4nC 50A 36W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 72 A | 5.4 mOhms | 1.4 V | 24 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 4.9mOhms | 20 V | SMD/SMT | DirectFET-M2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 72 A | 3.8 mOhms | Enhancement |
