- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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11,766
In-stock
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Vishay Semiconductors | MOSFET -200v -12A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 12 A | 0.178 Ohms | - 3.5 V | 106 nC | Enhancement | TrenchFET | |||
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5,067
In-stock
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onsemi | MOSFET -60V -12A P-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | Enhancement | ||||||
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3,423
In-stock
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onsemi | MOSFET PFET DPAK 60V 12A 180MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | 15 nC | |||||||
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2,026
In-stock
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STMicroelectronics | MOSFET P-CH 30V 0.024Ohm 12A STripFET VI | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 30 mOhms | 2.5 V | 26 nC | |||||
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5,000
In-stock
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onsemi | MOSFET -60V -12A P-Channel | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 156 mOhms | Enhancement | ||||||
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5,500
In-stock
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IR / Infineon | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 12 A | 175 mOhms | - 4 V | 12.7 nC | |||||
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2,250
In-stock
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onsemi | MOSFET -60V -12A P-Channel | 20 V | Through Hole | IPAK | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | Enhancement |
