- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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15,260
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 35 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 38 mOhms | Enhancement | ||||||
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328
In-stock
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Fairchild Semiconductor | MOSFET TO263_03, SINGLE, N-CH, 150V, 42MOHM ULTRAFE... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 35 A | 36 mOhms | 3 V | 30 nC | |||||
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963
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20.3 mOhms | 1.2 V | 39 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20.3 mOhms | 1.2 V | 39 nC | Enhancement | ||||
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VIEW | Siliconix / Vishay | MOSFET N-Chnl 300-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 300 V | 35 A | 0.078 Ohms | 2.5 V | 130 nC | Enhancement | TrenchFET |
