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Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPD135N08N3 G
1+
$0.920
10+
$0.713
100+
$0.460
1000+
$0.368
2500+
$0.311
RFQ
4,283
In-stock
Infineon Technologies MOSFET N-Ch 80V 45A DPAK-2 OptiMOS 3 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 45 A 11.4 mOhms 2 V 25 nC Enhancement OptiMOS
IPP45N06S4-09
1+
$1.050
10+
$0.848
100+
$0.651
500+
$0.576
RFQ
440
In-stock
Infineon Technologies MOSFET N-Ch 60V 45A TO220-3 OptiMOS-T2 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 45 A 7.9 mOhms 2 V 47 nC Enhancement OptiMOS
IPB45N06S4-09
1+
$1.210
10+
$1.040
100+
$0.799
500+
$0.706
1000+
$0.557
RFQ
1,074
In-stock
Infineon Technologies MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 45 A 7.6 mOhms 2 V 47 nC Enhancement OptiMOS
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