- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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671
In-stock
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IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
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3,130
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | |||||
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292
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 170 A | 5.6 mOhms | Enhancement | QFET | |||||
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621
In-stock
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IXYS | MOSFET 170 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 5.4 mOhms | 4 V | 109 nC | Enhancement | TrenchT2 | |||
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82
In-stock
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IXYS | MOSFET PolarHT HiperFET 100v, 170A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | 5 V | 198 nC | Enhancement | PolarHT, HiPerFET | |||
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50
In-stock
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IXYS | MOSFET 170A 200V | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 170 A | 11 mOhms | 5 V | 265 nC | Enhancement | GigaMOS | |||
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7
In-stock
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IXYS | MOSFET 170 Amps 200V 0.014 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 170 A | 14 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
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30
In-stock
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IXYS | MOSFET 170 Amps 100V 0.009 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | 5 V | 198 nC | Enhancement | PolarHT, HiPerFET | |||
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VIEW | IXYS | MOSFET 170 Amps 75V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 5.4 mOhms | Enhancement | ||||||
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800
In-stock
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Infineon Technologies | MOSFET 75V 170A 4.1 mOhm Automotive MOSFET | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||||
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40
In-stock
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IXYS | MOSFET Polar HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 200 V | 170 A | 14 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | ||||
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VIEW | IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET 75V 170A 4.1 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 2 V to 4 V | 120 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET 75V 170A 4.1 mOhm Automotive MOSFET | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC |
