- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,500
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 0.013 Ohms | - 2.5 V | 58 nC | Enhancement | TrenchFET | |||
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13,460
In-stock
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Vishay Semiconductors | MOSFET 60V 30A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 0.013 Ohms | - 2.5 V | 140 nC | Enhancement | TrenchFET | |||
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1,600
In-stock
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Siliconix / Vishay | MOSFET P-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 0.013 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
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VIEW | Vishay Semiconductors | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 15 A | 0.013 Ohms | - 1 V | 38 nC | Enhancement |
