- Manufacture :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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20,000
In-stock
|
Vishay Semiconductors | MOSFET 60V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 0.0071 Ohms | 1.5 V | 72 nC | Enhancement | TrenchFET | |||
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GET PRICE |
1,644
In-stock
|
Siliconix / Vishay | MOSFET 100V 50A 45watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 0.0071 Ohms | 1.5 V | 70 nC | Enhancement | TrenchFET | |||
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VIEW | Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 50 A | 0.0071 Ohms | 1.5 V | 72 nC | Enhancement | TrenchFET | |||||
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VIEW | Siliconix / Vishay | MOSFET P-Channel 60V Automotive MOSFET | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 60 V | - 110 A | 0.0071 Ohms | - 2.5 V | 200 nC | Enhancement | TrenchFET |