- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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2,673
In-stock
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Fairchild Semiconductor | MOSFET UniFET2 500V N-chan | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 770 mOhms | 5 V | 14 nC | UniFET | |||
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2,770
In-stock
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Fairchild Semiconductor | MOSFET N-Chan UniFET2 500V | 25 V | Through Hole | TO-220-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 1.38 Ohms | 5 V | 9 nC | UniFET | |||
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721
In-stock
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Fairchild Semiconductor | MOSFET UniFET1 300V N-chan MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 70 mOhms | 5 V | 60 nC | UniFET | |||
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842
In-stock
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Fairchild Semiconductor | MOSFET UniFET2 500V N-chan | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 1.38 Ohms | 5 V | 9 nC | UniFET | |||
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1,473
In-stock
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onsemi | MOSFET NFET IPAK 600V 2.2A 4.8R | 30 V | Through Hole | TO-247-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.4 A | 4 Ohms | 4.5 V | 10.1 nC | ||||
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4
In-stock
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IXYS | MOSFET 75 Amps 100V | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 125 C | Tube | Si | N-Channel | 100 V | 75 A | 25 mOhms | 4 V | 180 nC | HiPerFET, ISOPLUS i4-PAC | ||||
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556
In-stock
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STMicroelectronics | MOSFET N-channel 650 V 0.033ohm 69A Mdmesh | 25 V | Through Hole | TO-247-3 | - 55 C | + 125 C | Tube | Si | N-Channel | 650 V | 69 A | 30 mOhms | 4 V | 200 nC |
