- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,391
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 17.2 A | 63 mOhms | Enhancement | ||||||
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1,119
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 65 A | 16 mOhms | Enhancement | ||||||
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3,933
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 11 A | 115 mOhms | Enhancement | ||||||
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2,955
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 26mOhms 21nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 7.6 A | 30 mOhms | 21 nC | Enhancement | |||||
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2,751
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 60V N-CHAN | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 5.6 A | 68 mOhms | 1 V | 10.3 nC | Enhancement | ||||
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1,113
In-stock
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Fairchild Semiconductor | MOSFET SINGLE N-CH 150V ULTRAFET TRENCH | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 55 A | 22 mOhms | Enhancement | ||||||
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630
In-stock
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Fairchild Semiconductor | MOSFET 60V 55A N-Chan UniFET MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 55 A | 22 mOhms | Enhancement | ||||||
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504
In-stock
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onsemi | MOSFET NFETSO8FL60V17A39M OHM | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 63 A | 12.4 mOhms | |||||||
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579
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 30 A | 20 mOhms | 40 nC | ||||||
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177
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.8 mOhms | 1.2 V | 220 nC | Enhancement | ||||
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5,160
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 11 A | 115 mOhms | Enhancement | ||||||
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563
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 14 mOhms | 3 V | 14 nC | Enhancement | NexFET | |||
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909
In-stock
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Texas instruments | MOSFET 60V N-Chnl NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 13.3 mOhms | 1.9 V | 19 nC | NexFET | ||||
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546
In-stock
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Texas instruments | MOSFET 60V N-Chnl NxFT Pwr MSFT .. | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 9 mOhms | 1.9 V | 28 nC | NexFET | ||||
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400
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 74 A | 4.7 mOhms | 1.2 V | 135 nC | Enhancement | |||||
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699
In-stock
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Texas instruments | MOSFET 60-V N-Chanel NxFT Pwr MOSFETs | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.3 mOhms | 1.8 V | 44 nC | NexFET | ||||
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VIEW | IXYS | MOSFET 180 Amps 60V 0.005 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 180 A | 5 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 340 Amps 60V 0.003 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 340 A | 3 mOhms | Enhancement | HyperFET |
