- Manufacture :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,121
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel PowerTrench | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 27 mOhms | Enhancement | PowerTrench | |||||
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50
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | |||
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92
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | |||
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24
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 120 A | 27 mOhms | 3 V | 150 nC | Enhancement | HyperFET | |||
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22
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | |||
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VIEW | IXYS | MOSFET 87 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 87 A | 27 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | Enhancement | HyperFET | |||||
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2,720
In-stock
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IR / Infineon | MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 8.9 A | 27 mOhms | 1.7 V to 2.5 V | 4.9 nC | Enhancement |