- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,890
In-stock
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Fairchild Semiconductor | MOSFET PT5 150V/20V Nch Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 72 A | 19 mOhms | 2 V | 59 nC | Enhancement | PowerTrench | ||
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GET PRICE |
46
In-stock
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IXYS | MOSFET DIODE Id82 BVdass600 | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 72 A | 75 mOhms | 5 V | 240 nC | Enhancement | Polar, HiPerFET | ||
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GET PRICE |
2,990
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 72 A | 3 mOhms | 1.2 V | 15 nC | Enhancement | |||
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GET PRICE |
792
In-stock
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Wolfspeed / Cree | MOSFET SiC Power MOSFET 1700V, 72A | - 5 V, + 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 72 A | 45 mOhms | 2 V | 188 nC | Enhancement | |||
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GET PRICE |
167
In-stock
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Toshiba | MOSFET MOSFET NCh 3.7ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 72 A | 3.7 mOhms | 2 V to 4 V | 81 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET MOSFET NCh3.7ohm VGS10V10uAVDS120V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 120 V | 72 A | 3.7 mOhms | 2 V to 4 V | 130 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 72 Amps 550V 0.07 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 72 Amps 500V 0.055 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 72 A | 55 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 72 Amps 550 V 0.07 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 72 Amps 200 V 0.033 W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 33 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 72 Amps 200V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 33 mOhms | Enhancement |
