- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
30
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | +/- 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 40 A | 145 mOhms | 3.5 V | 98 nC | Enhancement | HiPerFET | ||
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GET PRICE |
4,608
In-stock
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onsemi | MOSFET NFET WDFN6 30V 1.5A 200mOhm | 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.5 A | 145 mOhms | 1.1 V | 1.4 nC | ||||
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GET PRICE |
20
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 42 A | 145 mOhms | Polar2 HiPerFET | |||||
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GET PRICE |
34
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 34 A | 145 mOhms | 2.1 V | 180 nC | Enhancement | ||||||
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GET PRICE |
1,583
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 42 A | 145 mOhms | Polar2 HiPerFET | |||||
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VIEW | IXYS | MOSFET PolarP2 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 42 A | 145 mOhms | Polar2 HiPerFET |
