- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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602
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3 A | 1.5 Ohms | 3 V | 11 nC | CoolMOS | ||||
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2,278
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3.1A IPAK-3 | 20 V | SMD/SMT | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 3.1 A | 1.5 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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6,538
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3 A | 1.5 Ohms | 3 V | 9.4 nC | CoolMOS | ||||
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1,205
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 3.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.1 A | 1.5 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | |||
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1,275
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 3.1A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.1 A | 1.5 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS |
