- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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13,530
In-stock
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Infineon Technologies | MOSFET 100VPower transistor OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.7 mOhms | 2.2 V | 70 nC | Enhancement | ||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 25A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
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1,153
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 25A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
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7,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 25A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
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274
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 89 mOhms | 3.5 V | 70 nC | Enhancement | CoolMOS | |||
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442
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 25A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
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494
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 25A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
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86
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 89 mOhms | 3.5 V | 70 nC | Enhancement | CoolMOS | |||
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6
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 89 mOhms | 3.5 V | 70 nC | Enhancement | CoolMOS | |||
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28
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 89 mOhms | 3.5 V | 70 nC | Enhancement | CoolMOS | |||
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500
In-stock
|
Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 89 mOhms | 3.5 V | 70 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 89 mOhms | 3.5 V | 70 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
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7,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 25A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS |
