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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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29,880
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 13 A | 205 mOhms | - 4 V | 38.7 nC | Enhancement | ||
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1,461
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 205mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 13 A | 205 mOhms | 38.7 nC | Enhancement | |||
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GET PRICE |
3,000
In-stock
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IR / Infineon | MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 13 A | 205 mOhms | 38.7 nC | Enhancement |
