- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
10,810
In-stock
|
Toshiba | MOSFET P-CH FET -30V 3.7 mOhm 45W | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 34 A | 3.7 mOhms | 115 nC | Enhancement | |||||
|
|
GET PRICE |
113
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 30 A | 170 mOhms | 4 V | 115 nC | Enhancement | POWER MOS 8 | |||
|
|
GET PRICE |
60
In-stock
|
Toshiba | MOSFET MOSFET NChtrr130ns 0.08ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 35 A | 80 mOhms | 3 V to 4.5 V | 115 nC | Enhancement | ||||
|
|
GET PRICE |
40
In-stock
|
IXYS | MOSFET SiC Power MOSFET | - 5 V to + 20 V | Screw Mount | SOT-227-4 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 48 A | 40 mOhms | 2.4 V | 115 nC | Enhancement | |||
|
|
VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 80 mOhms | 3 V | 115 nC | Enhancement |
