- Manufacture :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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7,885
In-stock
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Nexperia | MOSFET TAPE-7 MOSFET | - 20 V | SMD/SMT | SOT-89-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 12 Ohms | - 2.8 V | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | - 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 260 mA | 6 Ohms | - 800 mV | 3.7 nC | Enhancement | |||
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GET PRICE |
25,000
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | - 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 600 V | - 90 mA | 45 Ohms | - 1.3 V | 3.9 nC | Enhancement |
