- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 0.27 A (2)
- - 1.1 A (3)
- - 1.5 A (1)
- - 1.6 A (1)
- - 130 mA (1)
- - 17 A (1)
- - 180 mA (2)
- - 2.4 A (1)
- - 2.6 A (1)
- - 2.7 A (3)
- - 3 A (3)
- - 3.2 A (1)
- - 3.3 A (1)
- - 3.4 A (1)
- - 3.5 A (2)
- - 3.6 A (1)
- - 3.8 A (5)
- - 300 mA (3)
- - 35 mA (1)
- - 4 A (2)
- - 4.2 A (4)
- - 4.3 A (2)
- - 4.6 A (1)
- - 500 mA (1)
- - 600 mA (1)
- - 700 mA (4)
- - 75 mA (1)
- - 90 mA (2)
- - 900 mA (1)
- 1 A (1)
- 1.2 A (2)
- 1.4 A (2)
- 1.6 A (3)
- 1.7 A (2)
- 100 mA (1)
- 115 mA (2)
- 150 mA (2)
- 150 uA (1)
- 170 mA (3)
- 2 A (5)
- 2.2 A (2)
- 2.3 A (2)
- 2.4 A (1)
- 2.5 A (2)
- 2.8 A (1)
- 200 mA (4)
- 210 mA (1)
- 250 mA (4)
- 260 mA (1)
- 3.3 A (1)
- 3.4 A (1)
- 3.5 A (1)
- 3.6 A (2)
- 3.8 A (1)
- 3.9 A (1)
- 300 mA (4)
- 310 mA (1)
- 350 mA (2)
- 380 mA (4)
- 4 A (6)
- 4.1 A (1)
- 4.2 A (3)
- 4.3 A (1)
- 4.5 A (1)
- 4.6 A (2)
- 4.9 A (1)
- 470 mA (3)
- 480 mA (1)
- 5.47 A (1)
- 5.8 A (3)
- 5.9 A (1)
- 50 mA (1)
- 500 mA (8)
- 540 mA (1)
- 550 mA (1)
- 6.2 A (1)
- 6.4 A (1)
- 6.5 A (2)
- 6.9 A (1)
- 60 mA (1)
- 70 mA (1)
- 700 mA (1)
- 800 mA (2)
- 9.3 A (1)
- 940 mA (1)
- Rds On - Drain-Source Resistance :
-
- 1.2 Ohms (2)
- 1.3 Ohms (1)
- 1.4 Ohms (2)
- 1.45 Ohms (2)
- 1.5 Ohms (2)
- 1.7 Ohms (1)
- 1.8 Ohms (1)
- 10 Ohms (4)
- 100 mOhms (3)
- 110 mOhms (3)
- 120 mOhms (4)
- 13 mOhms (1)
- 13 Ohms (2)
- 136 mOhms (1)
- 14 Ohms (1)
- 140 mOhms (3)
- 150 mOhms (4)
- 160 Ohms (2)
- 175 mOhms (1)
- 180 mOhms (3)
- 190 mOhms (1)
- 2 Ohms (3)
- 2.1 Ohms (1)
- 2.4 Ohms (6)
- 2.8 Ohms (2)
- 20 mOhms (1)
- 20 Ohms (1)
- 200 mOhms (2)
- 21 mOhms (5)
- 220 mOhms (3)
- 225 mOhms (1)
- 23 mOhms (1)
- 230 mOhms (1)
- 25 mOhms (6)
- 25 Ohms (1)
- 250 mOhms (1)
- 257 mOhms (1)
- 29 mOhms (1)
- 3 Ohms (6)
- 3.5 Ohms (2)
- 300 mOhms (1)
- 31 mOhms (1)
- 330 mOhms (1)
- 35 mOhms (1)
- 38 mOhms (1)
- 4 Ohms (3)
- 4.2 Ohms (2)
- 4.5 Ohms (3)
- 40 mOhms (2)
- 400 mOhms (1)
- 41 mOhms (1)
- 410 mOhms (1)
- 42.5 mOhms (1)
- 45 mOhms (1)
- 460 mOhms (1)
- 47 mOhms (1)
- 5 Ohms (4)
- 5.3 Ohms (2)
- 50 mOhms (4)
- 52 mOhms (2)
- 540 mOhms (1)
- 55 mOhms (1)
- 550 mOhms (2)
- 57 mOhms (1)
- 6 Ohms (3)
- 60 mOhms (2)
- 600 mOhms (1)
- 61 mOhms (1)
- 64 mOhms (2)
- 65 mOhms (2)
- 7.5 Ohms (2)
- 70 mOhms (1)
- 72 mOhms (3)
- 73 mOhms (1)
- 75 mOhms (2)
- 80 mOhms (1)
- 80 Ohms (1)
- 82 mOhms (1)
- 9 Ohms (1)
- 90 mOhms (3)
- 900 mOhms (3)
- 92 mOhms (1)
- 95 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
-
- - 0.55 V (1)
- - 0.9 V (2)
- - 0.96 V (2)
- - 1 V (4)
- - 1.2 V (1)
- - 1.3 V (2)
- - 1.4 V (1)
- - 2 V (2)
- - 2.3 V (2)
- - 2.4 V (3)
- - 3 V (4)
- - 4 V (1)
- - 900 mV (1)
- 0.53 V (1)
- 0.6 V to 1.4 V (1)
- 0.7 V (1)
- 1 V (11)
- 1 V, 1 V (2)
- 1.2 V (2)
- 1.3 V (3)
- 1.5 V (7)
- 1.6 V (1)
- 1.7 V (1)
- 2 V (3)
- 2.5 V (1)
- 3 V (2)
- 300 mV (1)
- 400 mV (3)
- 500 mV (3)
- 600 mV (4)
- 700 mV (1)
- 800 mV (4)
- 900 mV (1)
- Qg - Gate Charge :
-
- - (1)
- 0.3 nC (1)
- 0.35 nC (2)
- 0.6 nC (5)
- 0.74 nC (1)
- 0.9 nC (2)
- 1.08 nC (1)
- 1.2 nC (4)
- 1.6 nC (2)
- 1.8 nC (3)
- 10.2 nC (3)
- 11 nC (2)
- 11.2 nC (2)
- 11.6 nC (1)
- 11.7 nC (1)
- 11.8 nC (1)
- 12 nC (1)
- 12.2 nC (1)
- 12.3 nC (2)
- 13.2 nC (1)
- 15.4 nC (1)
- 15.6 nC (1)
- 15.8 nC (1)
- 15.9 nC (1)
- 18.4 nC (1)
- 2.3 nC (1)
- 2.8 nC (1)
- 2.9 nC (1)
- 2.93 nC (1)
- 20 nC (2)
- 27.3 nC (1)
- 3.4 nC (1)
- 3.8 nC (1)
- 300 pC (1)
- 352 pC (1)
- 360 pC (1)
- 4.1 nC (1)
- 4.6 nC (1)
- 5.4 nC (1)
- 5.5 nC (3)
- 5.6 nC (1)
- 500 pC (2)
- 6.5 nC (1)
- 6.6 nC (1)
- 7 nC (1)
- 7.3 nC (2)
- 7.6 nC (2)
- 740 pC (2)
- 8.2 nC (2)
- 8.3 nC (2)
- 8.5 nC (1)
- 8.6 nC (4)
- 800 pC (2)
- 821 pC (1)
- 870 pC (1)
- 9.1 nC (1)
160 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,700
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.5 A | 257 mOhms | - 3 V | 4.1 nC | Enhancement | ||||
|
|
112,307
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 380 mA | 3 Ohms | 1.6 V | 0.3 nC | Enhancement | ||||
|
|
36,533
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 2 Ohms | Enhancement | ||||||
|
|
9,795
In-stock
|
Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.2 A | 250 mOhms | Enhancement | ||||||
|
|
8,440
In-stock
|
Diodes Incorporated | MOSFET 30V P-Chnl HDMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.1 A | 550 mOhms | Enhancement | ||||||
|
|
11,342
In-stock
|
Diodes Incorporated | MOSFET 20V N-Chnl HDMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.7 A | 180 mOhms | Enhancement | ||||||
|
|
14,189
In-stock
|
Diodes Incorporated | MOSFET 30V P-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 330 mOhms | Enhancement | ||||||
|
|
9,768
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 mA | 5 Ohms | Enhancement | ||||||
|
|
9,257
In-stock
|
Diodes Incorporated | MOSFET P-Chnl 45V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 45 V | - 90 mA | 9 Ohms | Enhancement | ||||||
|
|
9,398
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 uA | 5 Ohms | Enhancement | ||||||
|
|
9,047
In-stock
|
Diodes Incorporated | MOSFET 20V N Chnl HDMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.7 A | 180 mOhms | Enhancement | ||||||
|
|
80,545
In-stock
|
Diodes Incorporated | MOSFET 60V 200mW | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 115 mA | 7.5 Ohms | Enhancement | ||||||
|
|
6,549
In-stock
|
Diodes Incorporated | MOSFET 30V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 180 mOhms | Enhancement | ||||||
|
|
8,745
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 200V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 60 mA | 25 Ohms | Enhancement | ||||||
|
|
9,691
In-stock
|
Diodes Incorporated | MOSFET P-CHANNEL ENHANCEMENT MODE | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 42.5 mOhms | Enhancement | ||||||
|
|
6,580
In-stock
|
Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 800 mA | 900 mOhms | Enhancement | ||||||
|
|
14,120
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 90 mOhms | 8.2 nC | Enhancement | |||||
|
|
20,401
In-stock
|
Diodes Incorporated | MOSFET N-CHANNEL ENHANCEMENT MODE | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.6 A | 82 mOhms | Enhancement | ||||||
|
|
8,688
In-stock
|
Diodes Incorporated | MOSFET N-Ch 60V 3A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 mA | 7.5 Ohms | Enhancement | ||||||
|
|
3,536
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 100 V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 mA | 10 Ohms | Enhancement | ||||||
|
|
4,005
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | Enhancement | ||||||
|
|
3,524
In-stock
|
Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 75 mA | 20 Ohms | Enhancement | ||||||
|
|
4,475
In-stock
|
Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 90 mA | 14 Ohms | Enhancement | ||||||
|
|
10,285
In-stock
|
Diodes Incorporated | MOSFET P-Channel 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 72 mOhms | Enhancement | ||||||
|
|
5,364
In-stock
|
Diodes Incorporated | MOSFET N Channel | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.1 A | 110 mOhms | Enhancement | ||||||
|
|
8,868
In-stock
|
Diodes Incorporated | MOSFET 20V N-Channel Enhance. Mode MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.9 A | 45 mOhms | Enhancement | ||||||
|
|
5,375
In-stock
|
Diodes Incorporated | MOSFET P-channel 1.25W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.6 A | 40 mOhms | Enhancement | ||||||
|
|
4,773
In-stock
|
Diodes Incorporated | MOSFET 30V N Chnl UMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 150 mOhms | 0.7 V | 2.93 nC | Enhancement | ||||
|
|
7,925
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 550 mA | 4 Ohms | 1.7 V | 7.6 nC | Enhancement | ||||
|
|
17,933
In-stock
|
Diodes Incorporated | MOSFET P-Ch ENH FET -30V 2.4mOhm -10V -300mA | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 300 mA | 2.4 Ohms | - 2.4 V | 1.2 nC | Enhancement |
