- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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21,578
In-stock
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Toshiba | MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 47.4 mOhms | - 1 V | 12.8 nC | |||||
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20,108
In-stock
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Toshiba | MOSFET Small-signal MOSFET Vdss= -12V, ID= -6A | +/- 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6 A | 13.9 mOhms | - 1 V | 19.5 nC | Enhancement | |||||
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18,176
In-stock
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Toshiba | MOSFET Small Signal MOSFET | 12 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2 A | 390 mOhms | 850 mV | 1.1 nC | Enhancement | |||||
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11,481
In-stock
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Toshiba | MOSFET P-Ch U-MOSVI FET ID -4A -30VDSS 280pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 136 mOhms | - 2 V | 5.9 nC | |||||
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11,841
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 240 mOhms | - 1 V | 4.6 nC | Enhancement | ||||
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7,907
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: -2A, VDSS: -60V | - 20 V, + 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2 A | 240 mOhms | - 2 V | 8.3 nC | Enhancement | |||||
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5,609
In-stock
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Toshiba | MOSFET N-Ch U-MOSVI FET ID 6A 30VDSS 340pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 56 mOhms | 1.3 V to 2.5 V | 2.7 nC | |||||
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3,610
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 580 mOhms | 800 mV | 6 nC | Enhancement | ||||
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6,000
In-stock
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Toshiba | MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 150 mOhms | - 0.3 V to - 1 V | 10.4 nC | |||||
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3,182
In-stock
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Toshiba | MOSFET Small Signal Mosfet | 20 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 83.5 mOhms | 1.8 V | 7 nC | Enhancement | |||||
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4,353
In-stock
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Toshiba | MOSFET Small Signal Mosfet | 20 V | SOT-23-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 3 A | 140 mOhms | 2.5 V | 1.7 nC | Enhancement | ||||||
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9,228
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 8.1 Ohms | 1.1 V | 0.27 nC | Enhancement |