- Manufacture :
- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,700
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.5 A | 257 mOhms | - 3 V | 4.1 nC | Enhancement | |||
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2,923
In-stock
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Nexperia | MOSFET 40V P-channel Trench MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 1.5 A | 400 mOhms | - 1 V | 4.7 nC | Enhancement | |||
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3,035
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement | |||
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9,355
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 113 mOhms | - 2 V | - 2.3 nC | Enhancement | |||
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4,045
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 113 mOhms | - 2 V | - 2.3 nC | Enhancement | |||
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3,885
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement | |||
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8,611
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 107 mOhms | - 2 V | - 2.9 nC | Enhancement | |||
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4,140
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement | |||
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4,890
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 113 mOhms | - 2 V | - 2.3 nC | Enhancement | |||
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2,187
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 107 mOhms | - 2 V | - 2.9 nC | Enhancement | |||
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1,850
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 107 mOhms | - 2 V | - 2.9 nC | Enhancement |
