- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- 470 mA (3)
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- 6.4 A (1)
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- 6.9 A (1)
- 7.2 A (1)
- 8.6 A (1)
- 900 mA (1)
- Rds On - Drain-Source Resistance :
-
- 100 mOhms (2)
- 106 mOhms (3)
- 110 mOhms (3)
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- 2.4 Ohms (3)
- 20 mOhms (2)
- 21 mOhms (5)
- 220 mOhms (1)
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- 25 mOhms (1)
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- 29 mOhms (2)
- 3 Ohms (2)
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- 72 mOhms (3)
- 75 mOhms (2)
- 77 mOhms (1)
- 85 mOhms (1)
- 90 mOhms (1)
- 900 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 0.6 nC (2)
- 0.74 nC (1)
- 1.1 nC (1)
- 11 nC (1)
- 11.6 nC (1)
- 11.7 nC (1)
- 12 nC (1)
- 12.4 nC (1)
- 13.4 nC (1)
- 15 nC (1)
- 15.6 nC (1)
- 2.3 nC (1)
- 2.4 nC (1)
- 2.6 nC (1)
- 2.8 nC (2)
- 2.9 nC (1)
- 2.93 nC (1)
- 20 nC (2)
- 3.2 nC (3)
- 3.8 nC (1)
- 4.7 nC (1)
- 5 nC (1)
- 5.4 nC (1)
- 5.5 nC (2)
- 6.2 nC (1)
- 6.8 nC (1)
- 7.3 nC (2)
- 7.7 nC (1)
- 740 pC (2)
- 8.5 nC (1)
- 800 pC (3)
- Tradename :
70 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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96,142
In-stock
|
IR / Infineon | MOSFET MOSFT 5.0A 29mOhm 30V 2.5V drv capable | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 29 mOhms | 0.8 V | 6.8 nC | ||||||
|
25,053
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.4 A | 36 mOhms | 400 mV | 12 nC | Enhancement | |||||
|
GET PRICE |
137,170
In-stock
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IR / Infineon | MOSFET MOSFT 20V 1.2A 250mOhm 2.6nC LogLvl | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 250 mOhms | 0.7 V | 2.6 nC | |||||
|
18,008
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.2 A | 23 mOhms | 400 mV | 12.4 nC | Enhancement | |||||
|
43,925
In-stock
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Nexperia | MOSFET 20V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.4 A | 24 mOhms | 400 mV | 6.2 nC | Enhancement | |||||
|
11,342
In-stock
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Diodes Incorporated | MOSFET 20V N-Chnl HDMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.7 A | 180 mOhms | Enhancement | |||||||
|
9,047
In-stock
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Diodes Incorporated | MOSFET 20V N Chnl HDMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.7 A | 180 mOhms | Enhancement | |||||||
|
11,185
In-stock
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onsemi | MOSFET NFET SOT23 30V 4A TR | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 64 mOhms | Enhancement | |||||||
|
10,285
In-stock
|
Diodes Incorporated | MOSFET P-Channel 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 72 mOhms | Enhancement | |||||||
|
5,364
In-stock
|
Diodes Incorporated | MOSFET N Channel | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.1 A | 110 mOhms | Enhancement | |||||||
|
8,868
In-stock
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Diodes Incorporated | MOSFET 20V N-Channel Enhance. Mode MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.9 A | 45 mOhms | Enhancement | |||||||
|
5,375
In-stock
|
Diodes Incorporated | MOSFET P-channel 1.25W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.6 A | 40 mOhms | Enhancement | |||||||
|
4,773
In-stock
|
Diodes Incorporated | MOSFET 30V N Chnl UMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 150 mOhms | 0.7 V | 2.93 nC | Enhancement | |||||
|
8,234
In-stock
|
Infineon Technologies | MOSFET N-Ch 20V 3.8A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.8 A | 21 mOhms | Enhancement | |||||||
|
5,537
In-stock
|
Diodes Incorporated | MOSFET 600mW 20Vdss | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 110 mOhms | Enhancement | |||||||
|
6,298
In-stock
|
Diodes Incorporated | MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 470 mA | 2.4 Ohms | 1.3 V | 740 pC | Enhancement | |||||
|
4,952
In-stock
|
Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.47 A | 21 mOhms | 5.4 nC | |||||||
|
3,656
In-stock
|
Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | |||||
|
9,001
In-stock
|
Diodes Incorporated | MOSFET SINGLE P-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 75 mOhms | Enhancement | |||||||
|
1,642
In-stock
|
Diodes Incorporated | MOSFET 20V N-Chnl UMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.2 A | 225 mOhms | Enhancement | |||||||
|
8,382
In-stock
|
Nexperia | MOSFET 20V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8.6 A | 20 mOhms | 400 mV | 13.4 nC | Enhancement | |||||
|
44,280
In-stock
|
Fairchild Semiconductor | MOSFET 20V N-Channel PowerTrench | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 900 mA | 164 mOhms | Enhancement | PowerTrench | ||||||
|
9,581
In-stock
|
Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.4 A | 20 mOhms | 15.6 nC | |||||||
|
3,743
In-stock
|
Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | |||||
|
2,484
In-stock
|
Diodes Incorporated | MOSFET 1.4W 20V | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.9 A | 29 mOhms | Enhancement | |||||||
|
6,394
In-stock
|
Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.9 A | 13 mOhms | 11.6 nC | |||||||
|
2,198
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 28 V | 3.8 A | 72 mOhms | Enhancement | |||||||
|
2,313
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 26.5mOhm 10V 5.8A | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 600 mV | 20 nC | Enhancement | |||||
|
5,383
In-stock
|
Diodes Incorporated | MOSFET 20V N-Channel Enhance. Mode MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4 A | 60 mOhms | Enhancement | |||||||
|
4,541
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 50 mOhms | 1.5 V | 5.5 nC | Enhancement |