- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
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86,644
In-stock
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Nexperia | MOSFET P-CH DMOS 50V 130MA | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 6 Ohms | Enhancement | |||||
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147,384
In-stock
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Nexperia | MOSFET N-CH TRNCH 60V 300MA | 30 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 2.8 Ohms | Enhancement | |||||
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69,159
In-stock
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Fairchild Semiconductor | MOSFET SOT-23 N-CH ENHANCE | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 280 mA | 1.2 Ohms | Enhancement | |||||
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36,533
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 2 Ohms | Enhancement | |||||
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13,186
In-stock
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Nexperia | MOSFET TAPE7 PWR-MO | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.9 A | 77 mOhms | Enhancement | |||||
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18,061
In-stock
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Nexperia | MOSFET TRENCH-100 -TAPE 13 | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 10 Ohms | Enhancement | |||||
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GET PRICE |
1,146,800
In-stock
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Nexperia | MOSFET TAPE7 MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 5 Ohms | Enhancement | ||||
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641,500
In-stock
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Diodes Incorporated | MOSFET 20V 540mA | 8 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | |||||
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2,594
In-stock
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Diodes Incorporated | MOSFET N-Channel | 10 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 300 mA | 1.7 Ohms | Enhancement | |||||
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10,254
In-stock
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Nexperia | MOSFET TAPE7 MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 2.8 Ohms | Enhancement | |||||
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4,650
In-stock
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Diodes Incorporated | MOSFET 30V 700mA | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 700 mA | 200 mOhms | Enhancement | |||||
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1,558
In-stock
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Diodes Incorporated | MOSFET 20V 700mA | 12 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 700 mA | 300 mOhms | Enhancement | |||||
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6,148
In-stock
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Nexperia | MOSFET 2N7002/TO-236AB/REEL 11" Q3/T4 | 30 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 2.8 Ohms | 1 V | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement | |||||
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VIEW | Nexperia | MOSFET N-channel TrenchMOS intermed level FET | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 300 mA | 2.8 Ohms | 2 V | Enhancement |