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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
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125
In-stock
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Wolfspeed / Cree | RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt | Screw | 440199 | + 150 C | Tube | 220 W | - | GaN | N-Channel | 120 V | 24 A | - 10 V to + 2 V | 19 dB | HEMT | - | |||
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47
In-stock
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Wolfspeed / Cree | RF JFET Transistors GaN HEMT 1.2-1.4GHz, 800 Watt | Screw | 440117 | + 100 C | Tray | 800 W | - | GaN | N-Channel | 150 V | 24 A | - 10 V to + 2 V | 14 dB | HEMT | - | |||
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10
In-stock
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Wolfspeed / Cree | RF JFET Transistors GaN HEMT 3.1-3.5GHz, 240 Watt | Screw | 440201 | + 150 C | Tray | 240 W | - | GaN | N-Channel | 120 V | 24 A | - 10 V to + 2 V | 11.6 dB | HEMT | - | |||
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VIEW | Qorvo | RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN | SMD/SMT | + 275 C | Tray | 260 W | 288 W | GaN SiC | N-Channel | 36 V | 24 A | 145 V | 20.8 dB | HEMT | 48 V | |||||
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VIEW | Qorvo | RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN | SMD/SMT | + 250 C | Tray | 260 W | 288 W | GaN SiC | N-Channel | 36 V | 24 A | 145 V | 18 dB | HEMT | 48 V |