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Mounting Style :
Maximum Operating Temperature :
Packaging :
Technology :
Vds - Drain-Source Breakdown Voltage :
Vgs - Gate-Source Breakdown Voltage :
Maximum Drain Gate Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
CGH40180PP
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125
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Wolfspeed / Cree RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt Screw 440199 + 150 C Tube 220 W - GaN N-Channel 120 V 24 A - 10 V to + 2 V 19 dB HEMT -
CGHV14800F
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47
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Wolfspeed / Cree RF JFET Transistors GaN HEMT 1.2-1.4GHz, 800 Watt Screw 440117 + 100 C Tray 800 W - GaN N-Channel 150 V 24 A - 10 V to + 2 V 14 dB HEMT -
CGH35240F
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RFQ
10
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Wolfspeed / Cree RF JFET Transistors GaN HEMT 3.1-3.5GHz, 240 Watt Screw 440201 + 150 C Tray 240 W - GaN N-Channel 120 V 24 A - 10 V to + 2 V 11.6 dB HEMT -
T1G2028536-FL
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Qorvo RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN SMD/SMT   + 275 C Tray 260 W 288 W GaN SiC N-Channel 36 V 24 A 145 V 20.8 dB HEMT 48 V
T1G2028536-FS
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RFQ
Qorvo RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN SMD/SMT   + 250 C Tray 260 W 288 W GaN SiC N-Channel 36 V 24 A 145 V 18 dB HEMT 48 V
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