- Package / Case :
- Id - Continuous Drain Current :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Gain | |
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13
In-stock
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ASI / Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | Case 211-11 | + 200 C | Tray | Si | N-Channel | 65 V | 13 A | ||||||
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11
In-stock
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ASI / Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | Case 211-07 | + 200 C | Tray | Si | N-Channel | 65 V | 4.5 A | ||||||
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1
In-stock
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ASI / Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | NI-360 | Tray | 60 W | Si | N-Channel | 65 V | 4.25 A | 18.8 dB | |||||
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6
In-stock
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ASI / Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | Case 211-07 | + 200 C | Tray | Si | N-Channel | 65 V | 9 A | ||||||
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VIEW | ASI / Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | + 200 C | Tray | Si | N-Channel | 65 V | 4.25 A | ||||||||
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VIEW | ASI / Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | + 200 C | Tray | Si | N-Channel | 65 V | 4.25 A |