Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Vds - Drain-Source Breakdown Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Gain
BG 3130 H6327
VIEW
RFQ
Infineon Technologies RF MOSFET Transistors RF MOSFETS SMD/SMT SOT-363 + 150 C Reel   Si N-Channel 12 V 25 mA 24 dB
BG 3130R H6327
VIEW
RFQ
Infineon Technologies RF MOSFET Transistors RF MOSFETS SMD/SMT SOT-363 + 150 C Reel   Si N-Channel 12 V 25 mA 24 dB
BF 1005S E6327
GET PRICE
RFQ
12,042
In-stock
Infineon Technologies RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode SMD/SMT SOT-143 + 150 C Reel 200 mW Si N-Channel 8 V 25 mA 1 GHz
Page 1 / 1