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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Maximum Operating Temperature | Packaging | Technology | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | |
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Infineon Technologies | RF MOSFET Transistors RFP-LDMOS 9 | H-33288-6 | + 125 C | Tray | Si | 65 V | 1.85 A | 30 mOhms |
