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Packaging :
Output Power :
Id - Continuous Drain Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Gain
PTFA212001E V4 R250
250+
$122.610
VIEW
RFQ
Infineon Technologies RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... SMD/SMT H-36260-2 + 150 C Reel 200 W Si N-Channel 65 V 1.6 A 50 mOhms 15.8 dB
PTFA192001E V4 R250
250+
$122.610
VIEW
RFQ
Infineon Technologies RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 1930-1990 ... SMD/SMT H-36248-2 + 150 C Reel 100 W Si N-Channel 65 V 900 mA 50 mOhms 17 dB
PTFA212001F V4 R250
VIEW
RFQ
Infineon Technologies RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... SMD/SMT H-37260-2 + 150 C Reel 200 W Si N-Channel 65 V 1.6 A 50 mOhms 15.8 dB
PTFA192001E V4
VIEW
RFQ
Infineon Technologies RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 SMD/SMT H-36248-2 + 150 C Tray 100 W Si N-Channel 65 V 900 mA 50 mOhms 17 dB
PTFA212001E V4
VIEW
RFQ
Infineon Technologies RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 SMD/SMT H-36260-2 + 150 C Tray 200 W Si N-Channel 65 V 1.6 A 50 mOhms 15.8 dB
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