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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
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VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... | SMD/SMT | H-36260-2 | + 150 C | Reel | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB | ||||
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VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 1930-1990 ... | SMD/SMT | H-36248-2 | + 150 C | Reel | 100 W | Si | N-Channel | 65 V | 900 mA | 50 mOhms | 17 dB | ||||
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VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... | SMD/SMT | H-37260-2 | + 150 C | Reel | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB | ||||
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VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-36248-2 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 900 mA | 50 mOhms | 17 dB | ||||
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VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-36260-2 | + 150 C | Tray | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB |