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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Gain
BLA6G1011-200R,112
VIEW
RFQ
NXP Semiconductors RF MOSFET Transistors TRANS PWR LDMOS 200W SMD/SMT SOT-502A-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
BLA6G1011LS-200RG,
VIEW
RFQ
NXP Semiconductors RF MOSFET Transistors PWR LDMOS TRANSISTOR SMD/SMT SOT-502C-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
BLA6G1011L-200RG,1
VIEW
RFQ
NXP Semiconductors RF MOSFET Transistors PWR LDMOS TRANSISTOR SMD/SMT SOT-502D-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
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