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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Gain | |
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STMicroelectronics | RF MOSFET Transistors RF PWR trans Ldmost 2.0 GHz N-Ch ENH | SMD/SMT | M243 | + 150 C | Bulk | 65 W | Si | N-Channel | 80 V | 12 A | 12.5 dB |
