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Packaging :
Output Power :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Gain
2SK3475TE12LF
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RFQ
1,000
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Toshiba RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS SMD/SMT PW-Mini-3   Reel 630 mW Si N-Channel 20 V 1 A 14.9 dB
2SK3074TE12LF
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RFQ
1,000
In-stock
Toshiba RF MOSFET Transistors N-Ch Radio Freq 1A 3W 30V VDSS SMD/SMT PW-Mini-3   Reel 630 mW Si N-Channel 30 V 1 A 14.9 dB
PD85035-E
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RFQ
STMicroelectronics RF MOSFET Transistors POWER R.F. N-Ch Trans SMD/SMT PowerSO-12 + 165 C Tube 35 W Si N-Channel 40 V 8 A 14.9 dB
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