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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Gain | |
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430
In-stock
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Freescale / NXP | RF MOSFET Transistors HV6E 60W TO270-2N FET | SMD/SMT | TO-270 | + 150 C | Reel | Si | N-Channel | 66 V | 21.1 dB |
