- Package / Case :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... | SMD/SMT | H-36260-2 | + 150 C | Reel | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB | ||||
|
VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... | SMD/SMT | H-37260-2 | + 150 C | Reel | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB | ||||
|
VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-36260-2 | + 150 C | Tray | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB |