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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
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13
In-stock
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MACOM | RF MOSFET Transistors 5-400MHz 100Watts 28Volt Gain 12dB | SMD/SMT | Case 744A-01 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 16 A | 12 dB | ||||
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1
In-stock
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MACOM | RF MOSFET Transistors 5-500MHz 100Watts 28Volt Gain 8.8dB | SMD/SMT | Case 333-04 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 13 A | 8.8 dB | ||||
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10
In-stock
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MACOM | RF MOSFET Transistors 100-500MHz 100Watts 28Volt 10dB | SMD/SMT | Case 744A-01 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 12 A | 10 dB at 500 MHz | ||||
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VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-36248-2 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 900 mA | 50 mOhms | 17 dB | ||||
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VIEW | Infineon Technologies | RF MOSFET Transistors RF LDMOS FETs 340W 30V 1930-1990 MH... | SMD/SMT | H-37275-6-2 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 2.6 A | 19 dB |