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9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
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VIEW | NXP Semiconductors | RF MOSFET Transistors TRANS PWR LDMOS 200W | SMD/SMT | SOT-502A-3 | + 150 C | Tube | 200 W | Si | N-Channel | 65 V | 49 A | 930 mOhms | 20 dB | ||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors PWR LDMOS TRANSISTOR | SMD/SMT | SOT-502C-3 | + 150 C | Tube | 200 W | Si | N-Channel | 65 V | 49 A | 930 mOhms | 20 dB | ||||
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VIEW | Freescale / NXP | RF MOSFET Transistors HV9 2GHz 45W NI1230-4S2L | Reel | 200 W | Si | ||||||||||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors TRANS LDMOS NCH 75V | SMD/SMT | SOT-502B-3 | + 150 C | Tube | 200 W | Si | N-Channel | 75 V | 150 mA | 60 mOhms | 13 dB | ||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors PWR LDMOS TRANSISTOR | SMD/SMT | SOT-502D-3 | + 150 C | Tube | 200 W | Si | N-Channel | 65 V | 49 A | 930 mOhms | 20 dB | ||||
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VIEW | NXP Semiconductors | RF MOSFET Transistors TRANS LDMOS NCH 75V | SMD/SMT | SOT-502A-3 | + 150 C | Tube | 200 W | Si | N-Channel | 75 V | 150 mA | 60 mOhms | 13 dB | ||||
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VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... | SMD/SMT | H-36260-2 | + 150 C | Reel | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB | ||||
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VIEW | Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... | SMD/SMT | H-37260-2 | + 150 C | Reel | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB | ||||
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VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-36260-2 | + 150 C | Tray | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB |