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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Gain
BLA6G1011-200R,112
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NXP Semiconductors RF MOSFET Transistors TRANS PWR LDMOS 200W SMD/SMT SOT-502A-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
BLA6G1011LS-200RG,
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NXP Semiconductors RF MOSFET Transistors PWR LDMOS TRANSISTOR SMD/SMT SOT-502C-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
Default Photo
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Freescale / NXP RF MOSFET Transistors HV9 2GHz 45W NI1230-4S2L       Reel 200 W Si          
BLA1011S-200R,112
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NXP Semiconductors RF MOSFET Transistors TRANS LDMOS NCH 75V SMD/SMT SOT-502B-3 + 150 C Tube 200 W Si N-Channel 75 V 150 mA 60 mOhms 13 dB
BLA6G1011L-200RG,1
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NXP Semiconductors RF MOSFET Transistors PWR LDMOS TRANSISTOR SMD/SMT SOT-502D-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
BLA1011-200R,112
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RFQ
NXP Semiconductors RF MOSFET Transistors TRANS LDMOS NCH 75V SMD/SMT SOT-502A-3 + 150 C Tube 200 W Si N-Channel 75 V 150 mA 60 mOhms 13 dB
PTFA212001E V4 R250
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Infineon Technologies RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... SMD/SMT H-36260-2 + 150 C Reel 200 W Si N-Channel 65 V 1.6 A 50 mOhms 15.8 dB
PTFA212001F V4 R250
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Infineon Technologies RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... SMD/SMT H-37260-2 + 150 C Reel 200 W Si N-Channel 65 V 1.6 A 50 mOhms 15.8 dB
PTFA212001E V4
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Infineon Technologies RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 SMD/SMT H-36260-2 + 150 C Tray 200 W Si N-Channel 65 V 1.6 A 50 mOhms 15.8 dB
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