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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Gain
3SK292(TE85R,F)
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4,417
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Toshiba RF MOSFET Transistors RF High Freq VHF/UHF SMQ 4-Pin N-C... SMD/SMT SMQ-4 + 125 C Reel   Si N-Channel 12.5 V 30 mA   26 dB
3SK294(TE85L,F)
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4,132
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Toshiba RF MOSFET Transistors RF High Freq VHF/UHF SMQ 4-Pin N-C... SMD/SMT SOT-343-4 + 125 C Reel   Si N-Channel 12.5 V 30 mA   26 dB
AFT20P140-4WNR3
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Freescale / NXP RF MOSFET Transistors HV9 2GHz 24W OM780-4 SMD/SMT OM-780-4 + 125 C Reel 24 W Si N-Channel 65 V 500 mA   17.8 dB
MRF8P20165WHSR3
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Freescale / NXP RF MOSFET Transistors HV8 2GHZ 165W NI780S-4 SMD/SMT NI-780S-4 + 125 C Reel 28 W Si N-Channel 65 V     16.3 dB at 1.995 GHz
MRF8P23160WHSR3
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Freescale / NXP RF MOSFET Transistors HV8 2.3GHz 160W NI780S-4 SMD/SMT NI-780S-4 + 125 C Reel 144 W Si         15 dB
MRF6VP3091NBR5
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Freescale / NXP RF MOSFET Transistors VHV6 50V 4.5W SMD/SMT TO-272 + 125 C Reel 90 W Si   115 V     24 dB
MRF8P20165WHR3
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Freescale / NXP RF MOSFET Transistors HV8 2GHZ 165W NI780-4 SMD/SMT NI-780S-4 + 125 C Reel 28 W Si N-Channel 65 V     16.3 dB at 1.995 GHz
PTFA092211EL V4 R250
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Infineon Technologies RF MOSFET Transistors RFP-LDMOS GOLDMOS 8   H-33288-2 + 125 C Reel   Si   65 V 1.5 A 40 mOhms  
PTFB182503EL
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160
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Infineon Technologies RF MOSFET Transistors RFP-LDMOS 9   H-33288-6 + 125 C Tray   Si   65 V 1.85 A 30 mOhms  
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