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9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
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4,417
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Toshiba | RF MOSFET Transistors RF High Freq VHF/UHF SMQ 4-Pin N-C... | SMD/SMT | SMQ-4 | + 125 C | Reel | Si | N-Channel | 12.5 V | 30 mA | 26 dB | |||||
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4,132
In-stock
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Toshiba | RF MOSFET Transistors RF High Freq VHF/UHF SMQ 4-Pin N-C... | SMD/SMT | SOT-343-4 | + 125 C | Reel | Si | N-Channel | 12.5 V | 30 mA | 26 dB | |||||
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VIEW | Freescale / NXP | RF MOSFET Transistors HV9 2GHz 24W OM780-4 | SMD/SMT | OM-780-4 | + 125 C | Reel | 24 W | Si | N-Channel | 65 V | 500 mA | 17.8 dB | |||||
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VIEW | Freescale / NXP | RF MOSFET Transistors HV8 2GHZ 165W NI780S-4 | SMD/SMT | NI-780S-4 | + 125 C | Reel | 28 W | Si | N-Channel | 65 V | 16.3 dB at 1.995 GHz | ||||||
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VIEW | Freescale / NXP | RF MOSFET Transistors HV8 2.3GHz 160W NI780S-4 | SMD/SMT | NI-780S-4 | + 125 C | Reel | 144 W | Si | 15 dB | ||||||||
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VIEW | Freescale / NXP | RF MOSFET Transistors VHV6 50V 4.5W | SMD/SMT | TO-272 | + 125 C | Reel | 90 W | Si | 115 V | 24 dB | |||||||
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VIEW | Freescale / NXP | RF MOSFET Transistors HV8 2GHZ 165W NI780-4 | SMD/SMT | NI-780S-4 | + 125 C | Reel | 28 W | Si | N-Channel | 65 V | 16.3 dB at 1.995 GHz | ||||||
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VIEW | Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | H-33288-2 | + 125 C | Reel | Si | 65 V | 1.5 A | 40 mOhms | ||||||||
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160
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Infineon Technologies | RF MOSFET Transistors RFP-LDMOS 9 | H-33288-6 | + 125 C | Tray | Si | 65 V | 1.85 A | 30 mOhms |