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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Rise Time | Fall Time | Transistor Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Product Category | Factory Pack Quantity | |
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6,551
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Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | 4.6 mm | 2.5 mm | 1.6 mm | 40 W | Single | Si | N-Channel | 500 V | 12 A | 520 mOhms | Enhancement | 22 ns | 36 ns | 1 N-Channel | 50 | |||||
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23,511
In-stock
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Toshiba Semiconductor | MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-... | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | 20 mm | 5 mm | 26 mm | 250 W | Single | Si | N-Channel | 500 V | 50 A | 110 mOhms | Enhancement | 105 ns | 65 ns | 51 ns | 20 ns | MOSFET |
