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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Fall Time | |
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8,755
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Toshiba Semiconductor | MOSFET | MOSFET Small Signal | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | 1 Channel | 5.1 mm | 4.1 mm | 8.2 mm | 900 mW | Single | Si | N-Channel | 500 V | 500 mA | 18 Ohms | Enhancement | 11 ns |
